SiGe HETEROJUNCTION BIPOLAR TRANSISTORS ON INSULATOR

摘要

This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on Si bipolar transistors on SOI is reviewed, along with current work on SiGe HBTs on SOI.