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Post-WCMP Leakage Detection and Monitoring on 65-nm Devices Using an Advanced e-beam Inspection System

机译:使用先进的电子束检测系统,WCMP后泄漏检测和监控65-NM器件

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摘要

N+/P-well junction leakage was studied with an electron beam (e-beam) inspection system by detection of the gray level of the tungsten plug (W-plug) in the defect images of post tungsten chemical mechanical polish (WCMP) inspection. Leakage results of wafer acceptance tests (WAT) show a strong correlation with the e-beam inspection results. Failure analysis results reveal that the junction leakage is caused by lateral diffusion of nickel silicide underneath the spacer. The extrusion length correlates with the gray level of the tungsten plug very well.
机译:通过检测钨化学机械抛光(WCMP)检查的缺陷图像中的钨插头(W-PLUG)的灰度水平,用电子束(电子束)检查系统用电子束(电子束)检查系统研究了n + / p阱结漏。晶圆验收测试(WAT)的泄漏结果显示出与电子束检测结果的强烈相关性。失败分析结果表明,结漏是由间隔物下方硅化物的横向扩散引起的。挤出长度与钨堵塞的灰度级相相关。

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