Evaluation of a novel twin 300mm furnace concept for high productivity in a pilot production

摘要

A 300mm twin furnace configured as a LPCVD Poly reactor and an atmospheric reactor (ATM) is evaluated in a production environment. The selected processes were an amorphous silicon at the Poly reactor and a 900°C wet oxide at the ATM reactor. Awithin wafer uniformity of ±0.5 % and ±1.3% is achieved, respectively. A defect density of 0.28 adders/cm{sup}2 is detected in the Poly reactor and 0.028 adders/cm{sup}2 (>0.2μm) in the ATM reactor. Both processes meet the corresponding 200mm processspecification of a 0.2μm DRAM production. Slip free processing is demonstrated for the 900°C oxide applying ramp rates below 5°C/min. Careful consideration to the hardware design ensures that it is competitive compared to other furnace suppliers in terms of hardware costs, maintainability and throughput.