The Role of Oxidant in HF-Based Solution for Noble Metal Removal from Substrate

机译：氧化剂在基于HF的基础溶液中的作用

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摘要

This study was carried on to investigate and understand the role of oxidant in HF-based solution for removing copper contaminants on crystalline silicon surface. Its removal efficiency in solution is strongly dependent on the amount of oxidants as well as on the oxidation-reduction potential and pH value of solution.

机译：该研究进行了研究和理解氧化剂在基于HF的溶液中的作用，以除去晶体硅表面上的铜污染物。溶液中的去除效率强烈依赖于氧化剂的量以及溶液的氧化还原电位和pH值。

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《International symposium on ultra clean processing of silicon surfaces》|2001年||共4页
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作者
Tadahiro Ohmi; Ikunori Yokoi; Geun-Min Choi;
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正文语种
中图分类洁净技术;
关键词
FOM (HF/O_3); removal efficiency; metallic impurity; FPM (HF/H_2O_2);

机译：FOM（HF / O_3）;去除效率;金属杂质;FPM（HF / H_2O_2）;

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4. The Role of Oxidant in HF-Based Solution for Noble Metal Removal from Substrate [C] . Tadahiro Ohmi, Ikunori Yokoi, Geun-Min Choi International symposium on ultra clean processing of silicon surfaces . 2001

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The Role of Oxidant in HF-Based Solution for Noble Metal Removal from Substrate

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