Self-Assembled Impurity Superlattices and Microcavities in Silicon

摘要

We present ultra-shallow (5-30 nm) diffusion profiles performed by short-time boron diffusion from the gas phase into the n-type Si(l00) wafer using controlled surface injection of self-interstitials and vacancies. The diffusion profiles of this art are found to consist of both self-assembled longitudinal and lateral quantum wells formed naturally between the δ- barriers heavily doped with boron. The deformed potential fluctuations created by self-interstitials microdefects embedded into the p~+-diffusion profile are shown to cause the formation of self-assembled microcavities that are revealed by the light transmission spectra.