EFFECT OF BOUNDARY TEMPERATURE CONDITIONS ON THE SHAPE OF PHASE TRANSITION FRONT/PHASE INTERFACE, MELT FLOW AND IMPURITY DISTRIBUTION DURING THE GROWTH OF SINGLE CRYSTALS BY THE AHP - METHOD

摘要

The two-dimensional model is described for the nonstationary heat and mass transfer process in the growth of semiconductor crystals by the AHP method (Axial Heat Flux close to the Phase Interface). The effect of boundary temperatures on the shape of solid-liquid interface, melt flow and distribution of Sb impurity in the single crystal of Ge was studied in the model problems reflecting, nevertheless, experimental conditions. The boundary conditions are determined under which the shape of solid-liquid interface will be slightly convex into the melt.