Formerly the stationary, two-dimensional model describing the transfer processes and vacancy (v) - interstitial (i) recombination in CZ-growing silicon single crystals was considered in complete statement. For one dimensional case and analytical axial temperature profile in crystal this model was verified in [2] for comparison with fast recombination approximation, Residual vacancy C_v and interstitial C_i concentrations after a recombination were calculated on base of a thermal history of 150 mm diameter silicon single crystals growth in EKZ-2700 hot zone. By using of this data the (C_i -C_v)-distributions of residual concentration differences were plotted and compared with experimental life time maps in a grown crystals. Size of OSF ring in single crystals was analyzed for different crystal pull rate regimes. In this work the time dependent 2D-model of v-i-behaviour during crystal growth is considered for an approximation and for a thermal crystal history, too. Time dependent C = C_i -C_v [cm~(-3)] concentration distributions for different VP pull rate regimes are analyzed, including experimental regimes with the crystal pull rate Vp decreasing for intermediate growth stages (Fig. 1). Calculation results are compared with the experimental life time maps in grown crystals. The comparison with the former stationary model data is given. The suitable of the latter model for an analysis of real crystal structure is discussed.
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