As Chemical Mechanical Polishing (CMP) is widely used in semiconductor fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to characterize the used oxide slurry physically and chemically to reuse it. As a result, the TEOS removal rate strongly depended on solid content and pH of slurry solution. However the solid content played a major role in determining the removal rates. Regardless of the number of polishing, the removal rate was almost same at a set of solid content by adding new slurry. Also a nonuniformity and defect density on polished surfaces did not show any differences between new and recycled slurries.
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