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MORPHOLOGY EVOLUTION DURING COPPER CMP: COMPARISON OF FIXED ABRASIVE AND CONVENTIONAL PADS

机译:铜CMP期间的形态学:固定磨料和传统垫的比较

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In this work, direct comparison is made between copper polishing using a conventional pad and slurry and using an oxidative chemical solution and a fixed abrasive pad. The evolution of the polished copper surface is observed using profilometry as a function of polishing time, down force, and pad type. Significant differences are observed that can be attributed to the nature of the pad/wafer interaction.
机译:在这项工作中,使用常规焊盘和浆料和使用氧化化学溶液和固定磨料垫在铜抛光之间进行直接比较。使用轮廓测定值观察抛光铜表面的进化,作为抛光时间,向下力和垫类型的函数。观察到可以归因于垫/晶片交互的性质的显着差异。

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