Low threshold current density operation (J{sub}(th) = 340A/cm{sup}2) of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapor deposition

摘要

We have achieved the lowest threshold current density of 340 A/cm{sup}2 in 1.25 μm GaInNAs/GaAs lasers grown by metalorganic chemical vapor deposition. A threshold current density per well of 170 A/cm{sup}2 is the record low value for 1.2～1.3 μm GaInNAs lasers.