High Power 850nm Superluminescent Diodes Design and Fabrication

摘要

High power, wide spectrum 850nm superluminescent diodes (SLD) structure is grown by Molecular Beam Epitaxy (MBE). By systematically comparing the various methods of suppression of lasing, we have obtained the optimal SLD structures. A maximum light power output of 1 mW was obtained at 120 mA current from a single mode polarization pertaining fibers (fiber core diameter 5.7μm, NA 0.22).