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Possibilities and limitations of multioxides crystals growth

机译:多氧化物晶体生长的可能性和局限性

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The main methods of crystal growth from the melt the Czochralski and floating zone will be discussed and compared. Advantages, disadvantages and limitations of both methods as well as ways of solving some of the problems existing during growth of different types of multioxides crystals will be discussed. The chemical composition of crystals grown by the Czochralski method very often differs from the stoichiometric composition. Such deviations were found and well documented in a few groups of materials for example in garnets. Since the deviation is not known for most of the crystals, a simple way to determine the optimum starting composition of the melt will be presented. In order to determine the composition of the melt one should take into account evaporation of a volatile component that dissociates at high temperatures during crystal growth. Some problems related to the dopant distribution along the crystal growth direction in correlation with segregation coefficient for both methods will be discussed. To grow solid solution single crystals by the Czochralski method with a desired concentration of the admixture one has to know segregation coefficients of the components. A few examples of the dopant solubility limit in different crystal matrices will be presented.
机译:将讨论和比较来自熔体的晶体生长的主要方法。将讨论两种方法的优点,缺点和求解不同类型多氧化物晶体生长期间存在的一些存在的方法。由Czochralski方法生长的晶体的化学成分通常与化学计量组合物不同。发现这种偏差并在少量材料中被良好地记载,例如在装甲中。由于大多数晶体未知,因此将呈现确定熔体最佳起始组合物的简单方法。为了确定熔体的组成,应该考虑在晶体生长期间在高温下解离的挥发性组分的蒸发。将讨论与两种方法的分离系数相关的沿晶体生长方向的掺杂剂分布相关的一些问题。通过Czochralski方法生长固体溶液单晶,具有所需的混合物浓度,必须了解组分的分离系数。将呈现不同晶体基质中的掺杂剂溶解度极限的一些实例。

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