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Radiation effect on domain and defect structure of BaTiO_3 crystals

机译:Batio_3晶体域的辐射效应和缺陷结构

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BaTiO_3 single crystals were obtained by Remeika-method from solutions of melted salts and oxides. Radioactive Co~(60) isotope was employed as a source of γ-radiation. Three different radiation doses were applied: 1.2 * 10~7 rad, 3.0 * 10~8 rad, and 1.3 * 10~7 rad. Temperature of single crystals during irradiation did not exceed 313 K. A few batches of crystals were subjected to irradiation, namely: single crystals with natural surface (after the crystal was grown), single crystals with the etched surface layer and single crystals which had been subjected to an influence of the strong direct and alternating electric fields before exposure. Both domain and defect structure of single crystals was investigated by the etching method, decorating method, optical microscopy and scanning electron microscopy. It has been found that irradiation causes destabilization of the domain walls of the head-to-head-type with a negative charge screening spontaneous polarization (Ps). The negative domains in a positive matrix, which did not grow through the whole crystal body, were found to decay under the influence of radiation. In a place previously occupied by decaying negative domains, defect clusters are observed. The investigations have shown that there is a close correlation between the domain structure and the defect structure of BaTiO_3 crystals.
机译:BaTiO_3单个晶体通过Remeika法从熔融盐和氧化物的溶液获得。放射性钴〜(60)的同位素被用作γ射线的来源。三个不同的辐射剂量施加:1.2 * 10 -7弧度,3.0 * 10 -8拉德,和1.3×10 -7弧度。照射不超过313个晶体K.几个批次中单晶的温度进行照射,即:单晶天然表面(晶体生长后),单晶体蚀刻表面层和单晶这一直进行曝光前的强直流和交流电场的影响。通过蚀刻法单晶的两个结构域和缺陷结构进行了研究,装潢方法,光学显微镜和扫描电子显微镜。已经发现,照射引起的头 - 头型的畴壁的不稳定带有负电荷筛选自发极化(Ps)的。在正矩阵的负结构域,其不穿过整个结晶体生长,发现辐射的影响下衰减。在先前由腐烂负域占据的地方,缺陷簇被观察到。的研究已显示,存在结构域结构和BaTiO_3晶体的缺陷结构之间的紧密相关性。

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