Carrier dynamics in self-assembled InAs quantum dots

摘要

Photoluminescence (PL) spectra and time resolved PL from self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed at low temperature range and an increase in the linewidth at higher temperature. It was also observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in term of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.