High Performance Electron and Hole Current Switching in Double-Hetero Tunnel-Junction n-i-p Quantum Dot Transistor

摘要

A double-hetero tunnel-junction structure is introduced to the electron and hole current switching n-i-p type quantum dot transistor to improve its switching clearness. Previously the n-i-p type semiconductor quantum dot transistor was suggested on a first step model of an idea of electron and hole current switching including no recombination effect in a quantum dot and simply based on a homo tunnel-junction structure. Results in this paper show that there is some degree of recombination current in the homo tunnel-junction type and it is difficult to obtain an adequate clearness of switching performance, and newly introduced double-hetero tunnel-junction structure suppresses the recombination current and it gives a way to obtain a sufficient switching clearness.