Testing for Threshold Logic Circuits Based on Resonant Tunneling Diodes

摘要

This paper proposes comprehensive fault models to accommodate the typical manufacturing defects in resonant tunneling diode (RTD) threshold logic integrated circuits. The defects, such as device (field-effect transistor or RTD) short or open, can be modeled as conditional stuck-at fault models. The errors due to the RTD size variations are abstracted as threshold-change fault models. A testing methodology based on the proposed fault models is presented.