Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

摘要

By using resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs), we implement a new class of logic circuits that operate with multiple thresholds and multilevel output. The basic idea of the circuits is to synthesize transfer characteristics by key logic elements, namely, up and down literals. We first describe two fundamental logic circuits based on this idea: a ternary inverter and a literal gate. Then we present experimental results on these circuits fabricated by integrating InP-based RTDs and HEMTs. It is found that these circuits operate successfully with threshold voltages and output levels that have been predicted from individual device characteristics. Consequently, the validity of the basic idea behind the circuits presented here is proven. The device counts and the number of logic stages required for the present circuits are less than half those for conventional ones. A possible application is finally discussed.