Combined Raman Scattering And Optical Transmission On A1GaN Thin Films With Variable Flow Rates Of Trimethylindium

摘要

A1GaN epilayers were grown on sapphire substrates by Metal Organic Chemical Vapor Deposition, in order to improve the surface morphology and the film quality, variable flow rates of trimethylindium (TMIn) were introduced during the growth for the incorporation of indium [1].