Micro-Raman Studies on Film Surfaces Deposited on Silicons Substrate

摘要

Seveal techniques of rsynthesis fabrication of thin films have been advanced. Vacuum evaporation by electron and ion beams; direct current (DC) and radio frequency (RF) -plasma sputtering; molecular beam epitaxy (MBE); spray pyroplysis; electro-deposition; sol-gel deposition; chemical vapor deposition (CVD0; pulsed laser ablation deposition (PLAD); and several other hyphenated techniques (eg. RF sputtering-CVD; MO-CVD; pulsed laser assisted-CVD etc) have been used extensively by various workers. Substrates used for deposition of these films have been: glass, fused quartz (SiO_32), crystalline silicon; (c-Si, generally on faces (100), (010), (111)); sapphire (Al_2O_3), infrared materials like KBr, Teflon etc. and metals like stainless steel etc. The substrates at various temepratures are used to deposit and hold the films. Annealing at various temperatures is done to change the morphology and structure.