A simple unified scaleable RF model for high quality on-chip accumulation-mode varactors is presented for the first time. In this model, polynomial expressions are used to account for the effects of variable capacitance and resistance. The model is continuous from inversion to depletion right up to the accumulation region, and can be easily implemented in HSPICE and other circuit design software. It is also scaleable, and excellent agreement between the simulation results and measured data is achieved.
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