NUMERICAL SIMULATION OF SILICON CARBIDE DEPOSITION IN A COLD WALL CVD REACTOR

摘要

An axisymmetric cold wall CVD reactor was used to prepare silicon carbide films on silicon substrates from H_2/SiH_4/Ar/C_3H_8 mixtures. The deposition process was investigated by means of a two-dimensional numerical model. Some modeling results including streamlines, isotherms, and iso-concentration curves of the gaseous species are presented. The theoretical deposition profiles obtained with and without imposing the stoichiometry of the SiC deposits in the surface mechanism are discussed and compared to the experimental deposition profile.