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Fabrication of Monolithic 1-Chip FBAR Duplexer for W-CDMA Handsets

机译:用于W-CDMA手机的单片1芯片FBAR双工器的制造

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FBAR Filters and duplexers have high power handling capability, high Q factors, good thermal stability, a low volume, a low cost and IC compatibility their applications have been gradually increased in RF systems. However, there is no published papers and research about FBAR 1-Chip duplexer, which was fabricated with Tx and Rx filters because that is a very challenging task. We report for the first time that a monolithic 1-chip RF filter is achieved with the size of 2.5mm×2.5mm using a suspended membrane thin film bulk acoustic resonator (FBAR) technology to meet stringent demand for miniaturization and monolithic integration of duplexers in RF communication systems. In this work, a novel 1-Chip duplexer is designed by EM (Electromagnetic) simulation and RF Circuit simulation using HFSS and ADS. The highest insertion losses in the pass-band (1920-1980, 2110-2170MHz) are measured below 3.5dB. In the Rx band (2110-2170MHz) the attenuation is the over 45 and the attenuation in the Rx band is the over 54dB.
机译:FBAR过滤器和双工器具有高功率处理能力,高Q因子,良好的热稳定性,低容量,低成本和IC兼容性在RF系统中逐渐增加。但是,没有公布的文件和关于FBar 1芯片双工器的研究,它由TX和RX过滤器制造,因为这是一个非常具有挑战性的任务。我们首次报告了使用悬浮膜薄膜散声谐振器(FBAR)技术的25mm×2.5mm的整体式1芯片RF滤波器,以满足对微型化和双工器的单片集成的严格需求RF通信系统。在这项工作中,新颖的1芯片双工器由EM(电磁)模拟和使用HFSS和ADS进行RF电路仿真设计。通过带波带(1920-1980,2110-2170MHz)的最高插入损耗在3.5dB以下测量。在Rx频带(2110-2170MHz)中,衰减是超过45并且Rx频带中的衰减是超过54dB的衰减。

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