Duplex Ceramic Structures. Kinetics of Fabrication of Silicon Nitride by Reaction Sintering

摘要

The reaction sintering process for the fabrication of silicon nitride, i.e., the reaction of silicon powder compacts with nitrogen, was investigated in the temperature range from 1150 to 1450C, and the resulting silicon nitride was characterized by various analytical techniques. Oxygen impurities in the nitrogen atmosphere at high levels caused the formation of SiO2 and at low levels caused weight losses due to the formation of SiO gas. Fine particle size and iron impurities enhanced the reaction rate. The kinetics of the reaction of pure (99.99%) silicon powder compacts along with nitrogen follows the Jander relationship. (Author)