Cleaning, rinsing and drying effects in post Cu CMP clean

摘要

IN this work, the deposition behaviour of slurry particles after CMP + post CMP clean was investigated. Inspection of patterned Cu wafers after post COMP cleaning and drying in a spintool showed preferential deposition of different types of slurry particles (alumina and silica based) onto different substrate materials (oxide, Cu). Beside the slurry particles themselves, also the nature of the cleaning chemistry used during the post CMP cleaning step seemed to play an important role in this selective deposition.