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CMP wastewater treatment

机译:CMP污水处理

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The 1997 SIA National Techhnology Roadmap for Semiconductors (NTRS) predicts a decrease in integrated circuit (IC) line widths to 0.18 #mu# m form the current range of 0.5 #mu# m to 0.25 #mu# m by the year 2001.~1. Chemical-mechanical polishing (CMP) is ressential for the production of multilevel sub-0.25 #mu# m architectures because the reduction of topological defects is critical for photolithograpy resolution. Because defect reduction is especially critical in the production of the new generation of ICs, the use of CMP equipment and consumables is expected to grow at a greater rate than any other integrated circuit manufacturing equipment categyory. Toal sales of CMP and CMP-related equipment are projected to double from
机译:1997年SIA国家技术学技术路线图(NTRS)预测集成电路(IC)线宽的减少到0.18#mu#M,在2001年之前形成0.5#mu#m至0.25#m#m的当前范围。〜 1。化学机械抛光(CMP)是用于生产多级亚0.25#MU#M架构的旋能力,因为拓扑缺陷的减少对于光致分辨率至关重要。因为减少缺陷在生产新一代IC的生产中尤其重要,所以预期使用CMP设备和耗材的使用比任何其他集成电路制造设备原造更大的速度。 CMP和CMP相关设备的TOAL销售预计将增加

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