New techniques for in-line semiconductor characterisation are presented. These techniques allow in situ characterisation, during the intermediate stages of the production process, giving local doping and/or oxidation profiles with high lateral resolution useful for the design and development of advanced Si technology metal semiconductor field efffect transistor (MOSFET). We have used Scanning Capacitance Microscopy (SCaM) and Scanning Surface Harmonic Microscope (SSHM). The SCaM has been used in a new configuration for which, by modulating of the tip-sample distance, the lateral resolution is improved. The system is sensitive to the C/V characteristics of semiconductor samples. The SSHM is made up of a scanning tunnelling microscopy (STM) integrated in a resonant cavity to detect higher harmonics generated when an RF signal is applied between tip and sample. The harmonics give information on oxide impurities. Our system have been tested using p-doped silicon wafer with a 10 nm oxide layer thermally grown, showing good agreement with data obtained with standard measurements.
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