The aim of this work is to develop a position sensor system for automotive applications. This system is realized using a matrix of integrated silicon elements sensitive to magnetic field (Hall-effect cells), and a four quadrants permanent magnet (maximum magnetic field equal to 1300 Gauss) positioned parallel and in proximity or in contact to sensitive element. The magnet is moved along the plane XY of the latter and rotates on Z axis orthogonal to XY. Each Hall-effect cell is composed by four elements connected in a bridge configuration to reduce the offset voltage. Typical value are less than 50#mu#V at 1mA. A Full characterization of the Hall-effect cells will be reported, also at different temperatures. For offset voltage a temperature coefficient of 0.2mV/deg C@I=1mA has been found.
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机译：这项工作的目的是开发用于汽车应用的位置传感器系统。该系统使用对磁场（霍尔效应细胞）敏感的集成硅元件的矩阵来实现，并且四象象限的永磁体（等于1300高斯的最大磁场），其定位并与敏感元件接触或接触。磁铁沿着后者的平面XY移动，并在Z轴上旋转与XY正交。每个霍尔效应小区由以桥接配置连接的四个元件组成，以降低偏移电压。典型值在1mA处小于50＃mu＃V.将报告霍尔效应细胞的全部表征，也将在不同的温度下报告。对于偏移电压，已经找到了0.2mV / degc / i = 1mA的温度系数。
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