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首页> 外文期刊>Sensor Letters: A Journal Dedicated to all Aspects of Sensors in Science, Engineering, and Medicine >Fabrication of Integrated Dual Type Sensor to Detect Harmful Exhaust Gas and Offensive Odor for Automotive Application
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Fabrication of Integrated Dual Type Sensor to Detect Harmful Exhaust Gas and Offensive Odor for Automotive Application

机译:集成双型传感器的制造,以检测汽车应用中的有害废气和有害气味

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摘要

A dual silicon micro gas sensor device was fabricated using nano sized SnO{sub}2 thin films which had good sensitivities to CO and combustible gases, or to H{sub}2S gas for air quality sensors of automotive application. The integrated dual sensor, which can detect harmful reducing gases, and offensive odors simultaneously with simple integrated structure and low power consumption, was fabricated by MEMS silicon process. The silicon substrate was back etched for thermal isolation of sensing element area after Si{sub}3N{sub}4 layer was deposited on the both side of polished silicon wafer. Thin SnO{sub}2 thin film was deposited by RF magnetron sputtering, and then a thin tin metal layer between 1000 and 2000 A thick was oxidized between 600 and 800℃ by thermal oxidation to make nano sized and porous gas sensing film. The gas sensing layers such as SnO{sub}2, SnO{sub}2(Pt) and SnO{sub}2(+CuO) were patterned by a metal shadow mask for simple fabrication process on the silicon substrate. The sensing elements of the micro gas sensors, SnO{sub}2(+Pt) and SnO{sub}2(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to H{sub}2S, separately.
机译:使用具有对CO和可燃气体或对H {sub} 2S气体具有良好敏感性的纳米级SnO {sub} 2薄膜制造了双硅微气体传感器设备,用于汽车应用的空气质量传感器。集成的双传感器通过MEMS硅工艺制造,可以同时检测有害的还原性气体和难闻的气味,并且具有简单的集成结构和低功耗。 Si {sub} 3N {sub} 4层沉积在抛光的硅片的两面后,对硅衬底进行了回刻蚀,以实现传感元件区域的热隔离。通过RF磁控溅射沉积SnO {sub} 2薄膜,然后在600至800℃之间通过热氧化将厚度在1000至2000 A之间的锡金属薄层氧化,从而制得纳米级多孔气敏膜。通过金属阴影掩模对诸如SnO {sub} 2,SnO {sub} 2(Pt)和SnO {sub} 2(+ CuO)之类的气敏层进行构图,以简化在硅基板上的制造工艺。微型气体传感器的传感元件SnO {sub} 2(+ Pt)和SnO {sub} 2(CuO)分别在还原气体中表现出对CO气体的良好选择性和对H {sub} 2S的良好敏感性。

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