Performance of silicon carbide devices in power converters

摘要

This paper describes the characterization of the performance of a 100 V/1 A SiC PN diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The non-idealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance.