Fabrication of Ce:YIG film for electric and magnetic field sensor by pulsed-laser deposition and laser-induced forward transfer (LPM2000)

摘要

Ce-doped yttrium iron garnet (Ce:YIG) thin films were deposited for the first time by pulsed-laser deposition (PLD) on gadolinium gallium garnet (GGG(111)) substrates. Well crystallized film was obtained at high substrate temperature (approx 900 deg C) and in low gas pressure (approx 50 mtorr). A faraday rotation angle was wavelength dependent, and the largest value was 4.2 x 10~4 deg/cm at 420 nm. The control of the charge state of Ce ion is necessary for crystallization. The deposited Ce:YIG films were transferred by laser-induced forward transfer (LIFT) process to obtain a thick film.