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Ion-assisted deposition of E-gun evaporated ITO films at low substrate temperatures

机译:在低基板温度下的E枪蒸发ITO膜的离子辅助沉积

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ITO films have traditionally been deposited by sputtering on low temperature substrates and by evaporation on substrates heated to high temperatures. Recent work in our Application Laboratory using ion assisted deposition (IAD) at low substratetemperatures with a broad beam cold cathode ion source has resulted in ITO film properties comparable to non-IAD high temperature evaporation. This work reports the electrical and optical properties for ITO films deposited over a broad parameter space.
机译:传统上,ITO薄膜通过溅射在低温底物上并通过加热到高温的基板上蒸发来沉积。在具有宽光束冷阴极离子源的低次辅助沉积(IAD)的基础辅助沉积(IAD)中使用离子辅助沉积(IAD)的工作已经导致ITO膜性能与非IAD高温蒸发相当。这项工作报告了ITO薄膜的电气和光学性质,沉积在广泛的参数空间上。

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