首页> 外国专利> PEROVSKITE FILMS MANUFACTURING PROCESS BY MEANS OF CHEMICAL BATH DEPOSITION TECHNIQUES AND CHEMICAL EVAPORATION AT LOW TEMPERATURES.

PEROVSKITE FILMS MANUFACTURING PROCESS BY MEANS OF CHEMICAL BATH DEPOSITION TECHNIQUES AND CHEMICAL EVAPORATION AT LOW TEMPERATURES.

机译:通过低温化学浴沉积技术和化学蒸发的方法制备钙钙长石膜的过程。

摘要

The present disclosure is related to a perovskite films manufacturing process (CH3NH3Pbl3-xClx) which are used to manufacture of solar cells, such as the chemical bath deposition or the chemical evaporation al low temperatures. This manufacturing method allows the production of homogeneous large-scale perovskite films and also a control over the thickness of the films, on any substrate not soluble in water. Temperatures greater than 100°C, are not used in this process and does not require special conditions; in addition, allows the deposit without area limitation. With this process it is possible to deposit lead sulphide as a precursor for perovskite. Subsequently, there comes a treatment with iodine vapor, process in which only 80°C is necessary to generate them and to react with lead sulfide to transform the same into lead iodide. Finally, these films are exposed to methylammonium chloride vapors at 145°C to obtain perovskite.
机译:本公开涉及钙钛矿膜制造工艺(CH 3 NH 3 Pbl 3 -xCl x),其用于制造太阳能电池,例如化学浴沉积或低温化学蒸发。该制造方法允许在任何不溶于水的基材上生产均质的大规模钙钛矿薄膜,并且还可以控制薄膜的厚度。高于100°C的温度不在此过程中使用,并且不需要特殊条件;另外,允许存款而没有面积限制。通过这种方法,可以沉积硫化铅作为钙钛矿的前体。随后,用碘蒸气进行处理,其中仅需80°C即可生成碘蒸气并与硫化铅反应将其转化为碘化铅。最后,将这些膜在145℃下暴露于甲基氯化铵蒸气中以获得钙钛矿。

著录项

  • 公开/公告号MX2017000310A

    专利类型

  • 公开/公告日2018-06-13

    原文格式PDF

  • 申请/专利权人 UNIVERSIDAD DE SONORA;

    申请/专利号MX20170000310

  • 申请日2016-12-14

  • 分类号C23C14/06;C23C14/22;

  • 国家 MX

  • 入库时间 2022-08-21 12:51:20

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号