In-situ mesa etching and immediate regrowth in a hydride vapour phase epitaxy reactor

摘要

An in-situ mesa etching cum regrowth in a Hydride Vapour Phase Epitaxy (HVPE) reactor is demonstrated.Influence of HCl and PH_3 on the etching behaviour of surfaces with SiN_x stripes along [110] and [1-bar10] directions has been studied and qualitative etching mechanisms are proposed.Our results show that the etched depth,undercut and mesa shape can be controlled independently.The cross-section of an insitu etched and regrown mesa shows no voids and good planarization,indicating the potential of this method.Results of buried heterostructure lasers fabricated by this method are presented.