LACRASIL: Large Area Crystallization of amorphous Silicon using a mesa-shaped Laser

摘要

Large Area Crystallization of amorphous Silicon has been shown to be the most promising candidate to deliver the poly-Si layers needed for high performance TFTs. In this work the Single Area Excimer Laser Crystallization system has been assessed for different production related parameters like up-time and stability. The optimized poly-Si layers showed an average grain size of up to 600nm. Additionally an inline process control system has been developed.