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Recent Results on Nonlinear TFT Output Characteristics and Implications for AMLCD Pixel Charging

机译:最近的结果对非线性TFT输出特征和AMLCD像素充电的影响

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The pixel chairing analysis presented here shows that the TFT performance requirements need to be for various different in-product AMLCDs, as well as future larger and/or higher resolution AMLCDs. The analysis, which incorporates the effects of TFT nonlinear contact resistance on AMLCD pixel charging, is applicable to any kind of TFT processing technology, and in particular to lower cost, lower mask count technologies. We quantify the penalty in charging performance that occurs for even the smallest noticeable current crowding in TFT characteristics. It has been shown by others that the loss in performance is sensitive to the channel length and manifests itself in tow ways: 1) in an apparent reduction in device mobility and 2) in a nonlinear decrease of output conductance at low drain-to-source bias. Our results clearly demonstrate that while the first effect can be designed around, the second effect, primarily evident in the downward hooking of differential output conductance plots, may prevent the pixel from charging to its target level in a worst case scenario and must be explicitly included in the design analysis for future generation AMLCD products with smaller and/or less complex TFTs.
机译:这里介绍的像素升降分析表明,TFT性能要求需要用于各种不同的内部amlcds,以及未来更大和/或更高的分辨率AMLCD。该分析包括TFT非线性接触电阻对AMLCD像素充电的影响,适用于任何类型的TFT处理技术,特别是降低成本,下掩模计数技术。我们量化了充电性能的惩罚,即使是TFT特征中最小的明显的当前拥挤而发生的罚款。他人已经显示出性能的损失对通道长度敏感,并且在牵引方式中表现出来:1)在装置移动性和2)中,在低漏极到源极的输出电导下的非线性降低偏见。我们的结果清楚地表明,虽然可以设计第一效果,但第二次效果主要在差分输出电导图的向下挂钩中,可以防止像素在最坏情况下将像素充电到其目标水平,并且必须明确地包括在未来一代AMLCD产品的设计分析中,具有较小和/或更少的TFT。

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