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RADIATION-ENHANCED DIFFUSION OF ~(63)NI IN NICKEL AND IN COPPER

机译:辐射增强镍和铜中〜(63)Ni的扩散

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Radiation-enhanced diffusion coefficients of ~(63)Ni in nickel and in copper were determined between -100°C and +500°C after an irradiation with 1.85 MeV electrons which were obtained from a Van de Graaff generator. The diffusion coefficients were obtained by counting the activity of successive layers from the surface of single crystals which were removed by means of sputtering. The dislocation density of the crystals was smaller than d = 10~(-4) cm~(-2) and the evenness of the surfaces of the crystals was better than 20 A. It was found that the radiation-enhanced diffusion coefficients were approximately independent of the irradiation temperature in the "low" temperature regime, i.e. below about 100°C, and about 1.3·10~(-20) cm~2·s~(-1) and 1.1·10~(-20) cm~2·s~(-1) for nickel and copper, respectively. The replacement collision sequence number of dynamic crowdions was derived from these results and values of N ≈ 50000 and N ≈ 40000 were obtained for nickel and copper, respectively. The same values were obtained previously from measurements of the radiation damage rate. The radiation-enhanced diffusion coefficients were obtained for "high" irradiation temperatures, dependent on the irradiation temperature, and were approximately in agreement with those obtained by computation assuming that the migration activation energy of interstitials was E_(IT)~M = 0.869 eV and E_(IT)~M = 0.584 eV for nickel and copper, respectively (for K = 6.3·10~(-10) dpa·s~(-1)) . Dynamic crowdions can dissolve e.g. precipitates, and three-dimensionally migrating point defects can usually form precipitates.
机译:镍和铜中的辐射增强的扩散系数〜(63)Ni在与1.85meV电子的照射后在-100℃和+ 500℃下测定,从van de Graaff发生器获得。通过计算通过溅射除去的单晶表面的连续层的活性来获得扩散系数。晶体的位错密度小于d = 10〜(-4)cm〜(-2),并且晶体表面的均匀性优于20A。发现辐射增强的扩散系数约为独立于“低”温度调节的照射温度,即低于约100℃,约1.3·10〜(-20)cm〜2·s〜(-1)和1.1·10〜(-20)cm镍和铜的〜2·s〜(-1)。替代碰撞序列数量的动态围绕的动态围绕这些结果得出,分别获得N≈5000和N≈40000的值,分别用于镍和铜。先前从辐射损伤率的测量获得相同的值。获得辐射增强的扩散系数,用于“高”照射温度,取决于照射温度,并且近似与通过计算获得的那些,假设间隙的迁移激活能量是e_(它)〜m = 0.869eV和0.869 EV和e_(it)〜m = 0.584 eP用于镍和铜(用于k = 6.3·10〜(-10)DPA·S〜(-1))。动态纵传可以溶解。沉淀物,三维迁移点缺陷通常可以形成沉淀物。

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