Characterization of SnO_2 Films Prepared Using Tin Tetrachloride and Tetra Methyl Tin Precursors

摘要

We have investigated the effect of deposition conditions of SnO_2 films, deposited by chemical vapor deposition using tin tetrachloride and tetramethyltin precursors, on the film properties. The type of precursor and the deposition temperature affect the morphology of the films. The structure of the films is determined by the deposition temperature: films deposited at low temperatures show a mixed SnO and SnO_2 phase. The processing temperature and type of substrate determine the impurity content in the films. Electrical properties (e.g. the carrier mobility) and optical properties of the films are affected by the structure and the impurity content in these layers.