PROPERTIES OF THIN CN_x FILMS SYNTHESISED BY ELECTRON BEAM PROCESSING

摘要

Thin CN_x films have been synthesised by electron beam evaporation of graphite in a nitrogen atmosphere, for various N_2 pressures and different substrate temperatures. The XPS analyses show that the C1s XPS core level, centered above 286 eV, is about 67% of the entire area of the peak. This peak, together with the N1s peak at 400 eV, is a feature of C-N bonds with sp~2 hybridisation. The peak at 287.4 eV, of about 27% of the area, is considered to be due to sp~3 coordinated C=N bonds. The N1s XPS peak at 399 eV is also attributed to C=N bonds with sp~3 hybridisation. The carbon to nitride (C/N) ratio is about 1.165. The XPS results were confirmed by the presence of an FTIR spectra band centered at 2150 cm~(-1).