A Model of Coupled Diffusion of IMpurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries

摘要

On the basis of nonequilibrium thermodynamics a model of transport processes and quasi-chemical reactions of particles in semiconductor crystals has bene developed and a generalized impurity diffusion equation has been cnstructed. The effect of internal stresses on the impurity atoms and point defects transport was taken into account.