Radiation tolerance of NPN bipolar technology with 30 GHz Ft

摘要

The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 μm design rules CMOS is presented. In this work we explore the effect of dose rate, high dose level irradiation and elevated temperature irradiation on the electrical performance of single polysilicon bipolar transistors. The different results are discussed and comparison with previous are presented to place the technology with respect to others.