Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

摘要

Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with long-pulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5μm, and the mobilities for electrons and holes are 423cm~2/Vs and 118cm~2/Vs, respectively.