Amorphous oxide TFTs have attracted considerable attention for varying display application due to the high field-effect mobility and fairly good uniformity. Oxide TFTs such as IGZO TFTs can be fabricated under low temperature (less than 350 °C) by simple process compatible to commercially available Si:H TFTs fabrication process[l-2]. However, the stability of the oxide TFTs may be a critical issue because of the severe degradation under electrical gate bias and light illumination even though the optical band gap (E_(opt)) is more than 3 eV[3-4].
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