Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have attracted considerable interest for their application in active-matrix liquid crystal displays (AMLCDs) on cheap glass substrate (1). Recently, high performance poly-Si nanowire (NW) TFTs have been fabricated by nickel-metal induced lateral crystallization (NILC) (2-3). Since NILC grain could be formed parallel to the channel direction, it becomes feasible to form Si NWs with nearly monocrystalline structures (4). Unfortunately, poly-Si/oxide interfaces and poly-Si grain boundaries trap Ni and NiSi_2 precipitates, thus increasing leakage current (5-8) and shifting the threshold voltage (9). Since the poly-Si/oxide interfaces/volume ratio of NW TFTs was much higher than that of tradition NILC TFTs, effect of Ni residues on the performance of NILC NW TFTs should be investigated. In this study, phosphorous-doped a-Si/chem-SiO_2 films were used to investigate effect of Ni residues on the performance of NILC NW TFTs.
展开▼
