Dissolution of indium arsenide in the HNO_3-HBr-H_2O and Br_2-HBr solutions

摘要

The InAs dissolution in HNO_3 -HBr -H_2O and Br_2-HBr(aq.) solutions is investigated. The surface of equal etching rates is constructed and the process limiting stages of dissolution depending on a size of a ratio [HNO_3] / [HBr] in such solutions are determined. The kinetics of InAs dissolution in Br_2-HBr(aq.) solutions is investigated. The solution region which can be used for chemicodynamic polishing of InAs is determined.