The phenomena of phase separation and long range atomic ordering were investigated in InGaN films deposited by molecular beam epitaxy. It was found that films with greater that 20 atomic percent indium underwent phase separation by the mechanism of spinodal decomposition in the temperature range of 650-675 deg C. The films also exhibited long-range atomic ordering. It was found that films with less that 20 atomic percent indium, that did not phase separate, exhibited a higher degree of atomic ordering, as compared to higher indium smaples that did phase separate. This suggests taht the two phenomena are competing. The oder parameter of the alloys was found to increase with increasing film growth rate.
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