ISSUES IN LOW K DIELECTRIC INTEGRATION

摘要

The semiconductor industry drive to continually improve density and performance has forced the use of advanced interconnect systems. It is expected that low k dielectric will be combined with copper interconnects by the 0.13μm generation. The change to low k dielectrics causes many unforseen integration issues. Even though material candidates are often chosen for a combination of electrical properties and chemical stability, factors such as mechanical properties, availability of a high productivity manufacturing technology and infrastructural issues are likely to determine a material's ultimate manufacturing acceptance.