首页> 外文会议>Conference on Electrical Insulation and Dielectric Phenomena >Effect of porosity on the optical properties of anodized porous silicon thin films
【24h】

Effect of porosity on the optical properties of anodized porous silicon thin films

机译:孔隙率对阳极氧化多孔硅薄膜光学性质的影响

获取原文

摘要

A systematic approach to the study of porous silicon (PS) films is presented in this paper. The study relates the effect of the anodization parameters on the index of refraction, the integrated reflectance, and thus, the porosity of the film. For a single layered film, the results show that the index of refraction decreases with increasing current density and anodization time. Both the film thickness and porosity are directly proportional to the current density applied and they increase withincreasing anodization time.
机译:本文提出了一种对多孔硅(PS)膜研究的系统方法。该研究涉及阳极氧化参数对折射率,综合反射率以及因此膜的孔隙率的影响。对于单个分层膜,结果表明,折射率随着电流密度和阳极氧化时间的增加而降低。膜厚度和孔隙率均与所施加的电流密度成比例,并且它们增加阳极氧化时间。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号