A novel method/model for fault localization of a subtle open on a large thin-film resistor, using Photon Emission Microscopy (PEM) technique and electric field (F-PE) mechanism

摘要

Photon Emission Microscopy (PEM) is one of the commonly used and powerful techniques for fault localization which uses a sensitive camera (like CCD or InGaAs) to detect a light (photon) emission from an electrically biased device. The fault localization of an open anomaly can be a challenge for the failure analysis. This paper discusses a novel technique for localization of an open fault on a thin-film resistor using induced photoemission method. In this proposed method, an emission site is induced at the open fault location on the thin-film resistor. This method was found to be effective and it increases the success rate for an open fault localization on a thin-film resistor.