Analysis of the dv/dt Transient of Enhancement-Mode GaN FETs

摘要

The higher switching speed of wide bandgap devices requires new analysis to interpret voltage waveforms during turn-on and turn-off transients. Although the Miller effect remains a dominant feature, the conventional Miller plateau equations do not accurately model the dvds/dt for fast-switching devices such as GaN FETs. This paper derives equations for instantaneous dvds/dt based on static datasheet parameters, considering the Miller effect and the displacement of junction capacitance charges through the saturated channel. These equations will be verified with experimental results for an enhancement-mode GaN FET across a range of operating conditions. Furthermore, the peak dvds/dt is predicted using the derived equations, and shown to be more accurate than other models when compared to GaN experimental results.