Enhancement-mode GaN MOSFET with low leakage current and improved reliability

摘要

An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO₂/Si₃N₄ gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si₃N₄ portion of the SiO₂/Si₃N₄ gate insulation layer significantly reduces the formation of interface states at the junction between the gate insulation layer and the barrier layer, while the SiO₂ portion of the SiO₂/Si₃N₄ gate insulation layer significantly reduces the leakage current.